Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells

نویسندگان

  • Xianwen Sun
  • Guoqiang Li
  • Li Chen
  • Zihong Shi
  • Weifeng Zhang
چکیده

Two types of bipolar resistance switching with eightwise and counter eightwise polarities are observed to coexist in Au/SrTiO3/Ti memory cells. These two types of switching can be induced by different defect distributions which are activated by controlling the electric process. The analyses of I-V and C-V data reveal that the resistance switching with eightwise polarity originates from the change of Schottky barrier at the Au/SrTiO3 interface caused by trapping/detrapping effects at interface defect states, while the switching with counter eightwise polarity is caused by oxygen-vacancy migration.

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عنوان ژورنال:

دوره 6  شماره 

صفحات  -

تاریخ انتشار 2011